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Silicon Carbide MOSFETs from NOVOSENSE provide excellent RDSon temperature stability, high efficiency and optimal reliability. Our products cover 650V, 1200V and 1700V voltage classes. And also provide devices with a variety of RDSon values, from below 4mΩ to above 1Ω. Our products include TO247-4L, TO263-7L, and other packages, commonly used in industrial and automotive applications. It's noted that the NOVOSENSE SiC MOSFETs in through-hole package and surface mount package are designed with Kelvin source pins for optimized switching performance.
NPC0x0N120A is a 1200V SiC MOSFET product series, covering specifications such as 80mΩ, 60mΩ, 40mΩ, 22mΩ, etc. This series of products address the requirement of high-voltage, high-performance, and high-reliability SiC MOSFET in automotive and industrial applications, such as OBC/DC-DC, EV chargers, and photovoltaic and energy storage inverters.
- Excellent RDSon temperature stability
- Wider gate drive voltage range (-8 ~ 22V)
Supporting +15V/+18V mode (compatible with IGBT +15V)
20% lower RDSon under +18V mode
- Outstanding threshold voltage consistency
- Very low forward voltage drop of the body diode and high robustness
- Photovoltaic and energy storage converters
- xEV battery charging infrastructure
- OBC/DCDC converter for xEVs
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